Author Affiliations
Abstract
Surface-plasmon (SP) enhancement of amorphous-silicon-nitride (a-SiNx) light emission with single-layer gold (Au) waveguides is experimentally demonstrated through time-resolved photoluminescence measurement. The a-SiNx active layer with strong steady-state photoluminescence at 560 nm is prepared by plasma-enhanced chemical vapor deposition, and the Au waveguide on the top of the a-SiNx layer is fabricated by magnetron sputtering. The maximum Purcell factor value of ~3 is achieved with identified SP resonance of the Au waveguide at ~530 nm.
240.0240 Optics at surfaces 240.6680 Surface plasmons Chinese Optics Letters
2013, 11(2): 022401
Author Affiliations
Abstract
State Key Laboratory of Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
The formation process of silicon-nanocrystals (Si-NCs) in the amorphous silicon/silicon dioxide (a-Si/SiO2) multilayer structure during thermal annealing is theoretically studied with a modified model based on the Gibbs free energy variation. In this model, the concept of average effective interfacial free energy variation is introduced and the whole formation process consisting of nucleation and subsequent growth is considered. The calculating results indicate that there is a lower limit of the silicon layer thickness for forming Si-NCs in a-Si/SiO2 multilayer, and the oxide interfaces cannot constrain their lateral growth. Furthermore, by comparing the results for a-Si/SiO2 and a-Si/SiNx multilayers, it is found that the constraint on the crystal growth from the dielectric interfaces depends on the difference between interfacial free energies.
纳晶硅 多层结构 吉普斯自由能变 310.0310 Thin films 310.6805 Theory and design Chinese Optics Letters
2010, 8(12): 1199